IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, ...
Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such ...
DUBLIN--(BUSINESS WIRE)--The "IGBT & Thyristor Market by Packaging Type (IGBT Discrete, IGBT Module), Power Rating (Medium Power IGBT, High Power IGBT), Voltage (Below 400V, 600-650V), Application ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is today expanding its growing portfolio of automotive-grade ...
The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...
Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...
Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called ...
Cissoid is broadening its range of standard products with multiple new families of power modules. Designed to address the growing demand for robust, efficient, and flexible solutions in automotive, ...
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