London – Royal Philips Electronics is using a 0.6-micron laterally diffused MOS technology in a range of power transistors it plans to start sampling this year. The first device to be introduced using ...
LONDON — Tower Semiconductor Ltd. has added a high voltage power process capability at its Fab2 that will operate at 0.18 microns. The Laterally Diffused Metal Oxide Semiconductor (LDMOS) process is ...
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